Synthesis of large-area graphene on molybdenum foils by chemical vapor deposition |
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Authors: | Yuanwen Wu Guanghui Yu Haomin Wang Bin Wang Zhiying Chen Yanhui Zhang Bin Wang Xiaoping Shi Xiaoming Xie Zhi Jin Xinyu Liu |
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Affiliation: | 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, People’s Republic of China;2. School of Physics and Optoelectronic Technology, Dalian University of Technology, 2 Linggong Road, Dalian 116024, People’s Republic of China;3. Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 West Beitucheng Road, Beijing 100029, People’s Republic of China |
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Abstract: | We report the synthesis of large-area graphene films on Mo foils by chemical vapor deposition. X-ray diffraction indicates that the dissolution and segregation process governs the growth of graphene on Mo foils. Among all processing parameters investigated, the cooling rate is the key one to precisely control the thickness of graphene film. By optimizing the cooling rate between 1.5 and 10 °C/s, we managed to achieve graphene films ranging from mono- to tri-layer. Their uniformity and thickness were confirmed by Raman spectroscopy and optical measurements. The carrier mobility of films reaches as high as 193 cm2 V?1 s?1. Our experiments show that the Mo substrate has the similar simplicity and large tolerance to processing conditions as Cu. |
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