Restoration of graphene from graphene oxide by defect repair |
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Authors: | Meng Cheng Rong Yang Lianchang Zhang Zhiwen Shi Wei Yang Duoming Wang Guibai Xie Dongxia Shi Guangyu Zhang |
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Affiliation: | Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China |
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Abstract: | A simple and efficient method to repair defects in graphene oxide (GO) is reported, accompanied by a simultaneous reduction process by a methane plasma. The graphene after repair is of high quality. For a typical monolayer after repair and reduction, the minimum sheet resistance at the Dirac point and the Raman D/G peak intensity ratio are about 9.0 kΩ/□ and ~0.53, respectively. |
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