The electrical properties of graphene modified by bromophenyl groups derived from a diazonium compound |
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Authors: | Xiaochen Dong Qing Long Ang Wei Wenjing Zhang Lain-Jong Li Peng Chen Wei Huang |
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Affiliation: | 1. Key Laboratory for Organic Electronics and Information Displays (KLOEID), Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications (NUPT), 9 Wenyuan Road, Nanjing 210046, China;2. School of Chemical and Biomedical Engineering, Nanyang Technological University, Singapore 637457, Singapore;3. Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan |
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Abstract: | Graphene field-effect transistors were fabricated with mechanically exfoliated single-layer graphene (SLG) and bilayer graphene (BLG) sheets and the functionalization effects of bromophenyl groups derived from a diazonium compound on its transfer properties were explored. Spectroscopic and electrical studies reveal that the bromophenyl grafting imposes p-doping to both SLG and BLG. The modification of SLG by bromophenyl groups significantly reduces the hole carrier mobility and the saturation current in SLG transistors, suggesting an increase in both long-range impurity and short-range defect scattering. Unexpectedly, the bromophenyl group functionalization on BLG does not obviously increase both types of scattering, indicating that the BLG is relatively more resistant to charge- or defect-induced scattering. The results indicate that chemical modification is a simple approach to tailor the electrical properties of graphene sheets with different numbers of layers. |
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