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Computer modelling of current matching in a-Si : H/a-Si : H tandem solar cells on textured TCO substrates
Authors:M Zeman  JA Willemen  LLA Vosteen  G Tao  JW Metselaar
Affiliation:Department of Electronic Components, Technology and Materials, Delft University of Technology - DIMES, P.O. Box 5053, 2600 GB Delft, Netherlands
Abstract:Computer modelling is used as a tool for optimising a-Si : H/a-Si : H tandem cells on textured substrate in order to achieve current matching between the top and bottom cell. To take light scattering at the textured interfaces of the cell into account, we developed a multirough-interface optical model which was used for calculating the absorption profiles in the tandem cells. In order to simulate multi-junction solar cell as a complete device we implemented a novel model for tunnel/recombination junction (TRJ), which combines the trap-assisted tunnelling and enhanced carrier transport in the high-field region of the TRJ.We investigated the influence of light scattering and thickness of the intrinsic layer of the bottom cell on the optimal ratio i2/i1 between the thicknesses of the bottom (i2) and top (i1) intrinsic layers in the current-matched cell. The simulation results show that increasing amount of scattering at the textured interfaces leads to a lower ratio i2/i1 in the current-matched cell. This ratio depends on the thickness of the intrinsic layer of the bottom cell. The simulation results demonstrate that a-Si : H/a-Si : H tandem cell with 300 nm thick intrinsic layer in the bottom cell exhibits higher efficiency than the cell with 500 nm thick bottom intrinsic layer.
Keywords:Computer modelling  Current matching  Tunnel/recombination junction
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