横向接触式RF MEMS开关

提出了一种横向接触式RF MEMS开关,采用金属叉指结构进行驱动。通过结构建模和性能仿真,对叉指结构进行了优化,提高了机械性能,减小开关的尺寸。通过加大横向接触面积,降低接触电阻,减小开关导通态的插损,提高了开关的射频性能。利用低温表面牺牲层工艺在砷化镓衬底上进行了开关的流片,通过工艺的改进最终得到满意的流片结果。测试结果表明:在DC-20GHz频率范围内,开关的插入损耗小于0.3dB,隔离度大于20dB。

A Lateral Metal-contact RF MEMS Switch

A novel lateral metal-contact radio-frequency microelectromechanical system(RF MEMS) switch is presented,which is actuated by metal comb structure.The structure was optimized by model configuration and simulation for better mechanical performance and smaller chip size.The area of the contact face was enlarged to reduce the contact resistance and the insertion loss.The switch was fabricated on a GaAs wafer by low temperature surface sacrifice processing and gained a good result.From DC to 20 GHz,the insertion loss is less than 0.3 dB and the isolation is larger than 20 dB.