Preparation of ZnO:N films by radical beam gettering epitaxy |
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Authors: | I V Rogozin |
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Affiliation: | (1) Berdyansk State Pedagogical University, Berdyansk, 71118, Ukraine |
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Abstract: | ZnO:N epitaxial films are obtained by radical beam gettering epitaxy. The properties of the films are studied using X-ray diffraction, atomic-force microscopy, secondary-ion mass spectroscopy, and photoluminescence. A narrow (002) peak is observed in the X-ray diffraction spectra, which indicates that the ZnO:N films are oriented along the c axis. Secondary-ion mass spectroscopy indicates that N is present in the ZnO films. In the low-energy luminescence spectrum of the ZnO:N films, a peak at 3.31 eV is observed. This peak is presumably attributed to the exciton bound at the neutral acceptor NO. The postannealing of the ZnO:N films was carried out in atomic oxygen. The nature of the donor-acceptor (3.23 eV) and green (2.56 eV) luminescence bands is discussed. |
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Keywords: | 61 10 Nz 61 72 Ji 68 37 Ps 78 30 Fs 78 55 Et |
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