| 硫化温度对CuInS2薄膜微结构和光学性能的影响 |
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| 引用本文： | 夏冬林,刘俊,张兴良,赵修建.硫化温度对CuInS2薄膜微结构和光学性能的影响[J].材料导报,2011,25(2):7-9,19. |
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| 作者姓名： | 夏冬林 刘俊 张兴良 赵修建 |
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| 作者单位： | 武汉理工大学硅酸盐材料工程教育部重点实验室,武汉,430070 |
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| 基金项目： | 国家自然科学基金重点项目，中央高校基本科研业务费专项资金资助(武汉理工大学) |
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| 摘 要： | 采用磁控溅射法在玻璃衬底上沉积Cu-In合金预置膜,采用固态硫源在N2气氛下硫化热处理的方法制备了CuInS2薄膜。研究了硫化温度对CuInS2薄膜的晶相结构、表面形貌和光学带隙等性能的影响。采用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、紫外-可见光谱(UV-Vis)等测试手段对薄膜的晶相结构、表面形貌、光学性能进行了表征。结果表明,Cu-In合金预置膜经550℃硫化热处理20min可制备出黄铜矿结构的CuInS2薄膜,并具有(112)面的择优取向,所制备的CuInS2薄膜晶粒粒径约为1μm,光学带隙为1.51eV。
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| 关 键 词： | 磁控溅射 CuInS2薄膜 硫化 微观结构 光学带隙 |
Effects of Sulfurization Temperature on Microstructure and Optical Properties of CuInS_2 Films |
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| XIA Donglin,LIU Jun,ZHANG Xingliang,ZHAO Xiujian.Effects of Sulfurization Temperature on Microstructure and Optical Properties of CuInS_2 Films[J].Materials Review,2011,25(2):7-9,19. |
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| Authors: | XIA Donglin LIU Jun ZHANG Xingliang ZHAO Xiujian |
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| Affiliation: | XIA Donglin,LIU Jun,ZHANG Xingliang,ZHAO Xiujian(Key Laboratory of Silicate Materials Science and Engineering of Ministry of Education,Wuhan University of Technology,Wuhan 430070) |
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| Abstract: | Copper indium alloy precursor was prepared by magnetron sputtering on glass substrate.The sulfurization of precursor films was carried out using elemental sulfur under N2 atmosphere at elevated temperatures.The effects of sulfurization temperatures on the microstructures,surface morphology and optical band gap of thin films were investigated.The microstructural and optical properties of CuInS2 absorber films were characterized by X-ray diffraction(XRD),field emission scanning electron microscopy(FE-SEM) and... |
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| Keywords: | magnetron sputtering CuInS2 thin film sulfurization microstructure optical band gap |
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