Ga2O3(Gd2O3)/InGaAsenhancement-mode n-channel MOSFETs |
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Authors: | Ren F Kuo JM Hong M Hobson WS Lothian JR Lin J Tsai HS Mannaerts JP Kwo J Chu SNG Chen YK Cho AY |
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Affiliation: | Bell Labs., Lucent Technol., Murray Hill, NJ; |
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Abstract: | We have demonstrated the first Ga2O3(Gd2O3) insulated gate n-channel enhancement-mode In0.53Ga0.47As MOSFET's on InP semi-insulating substrate. Ga2O3(Gd2 O3) was electron beam deposited from a high purity single crystal Ga5Gd3O12 source. The source and drain regions of the device were selectively implanted with Si to produce low resistance ohmic contacts. A 0.75-μm gate length device exhibits an extrinsic transconductance of 190 mS/mm, which is an order of magnitude improvement over previously reported enhancement-mode InGaAs MISFETs. The current gain cutoff frequency, ft, and the maximum frequency of oscillation, fmax, of 7 and 10 GHz were obtained, respectively, for a 0.75×100 μm2 gate dimension device at a gate voltage of 3 V and drain voltage of 2 V |
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