应变无Al有源层InGaAsp／InGaP／In0.5（GaAI）0.5P／GaAs大功率激光二级管

生长了InGaAsp/InGaP/In（AlGa)P材料分别限制应变量子阱半导体激光器，发光波长780nm。利用电化学C-V表征材料掺杂，掺杂浓度达10^18cm^-1。利用荧光PL及EL表征其光学性质，PL峰为765nm。制得100μm、宽1mm长条形。测得阈值电流为315mA，斜率效率超过1W/A，功率转换达40%左右。注入电流1.5a，光功率单管输出达到1.2W。

Al-free Strained Active Region InGaAsp/InGaP/In0.5(GaAl)0.5P/GaAs High Power Laser Diodes

We have developed one separate confinement heterostructure InGaAsp/InGaP/In(AlGa)P laser diode(LD) of 780 nm weavelength,and use electrochemical C-V and PL to characterize the materials.PL peak wavelength is 765 nm and EL wavelength is 780 nm.We obtained 100 μm wide stripe,and 1 mm long LD bars.The threshold current is 315 mA,slope efficency can reach above 99 %.Pow-er conversion efficiency η reaches above 40 %.When current is 1.5 A,single LD can achieve above1.2 W output power.