Enhancing adhesion by ion beam-induced atomic mixing at the interface between copper film and polyimide substrate

Ion beam mixing was used to improve the adhesion between deposited Cu film (400 Å) and polyimide (PI) substrate. Ar⁺ ion with the energy levels between 180 and 200 keV, and the dose between 10¹⁴ to 4 × 10¹⁶ ions/cm² were used. The surface analyses were carried out by Rutherford Backscattering Spectroscopy (SEM). RBS analysis, using 2 MeV He⁺ ions, showed mixing of Cu and FI and the mixing depended on the Ar⁺ energy and dose. The X-ray study showed a very broad halo for deposited Cu film but the (111) peak appeared after the Ar⁺ implantation and the peak increased with Ar⁺ ion dose. Optical micrographs showed that Cu film formed circular bubbles after many thermal cycles when adhesion was poor and fracture cracks when adhesion was good.