| Synthesis of GaN nanorods on Si substrates with assistance of the volatilization of ZnO middle layers |
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| 作者姓名： | ZHUANGHuizhao GAOHaiyong XUEChengshan WANGShuyun DONGZhihua HEJianting |
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| 作者单位： | CollegeofPhysicsandElectronics,ShandongNormalUniversity,Jinan250014,China |
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| 基金项目： | This work was financially supported by the Key Research Program of National Natural Science Foundation of China (No. 90301002 and No. 90201025). |
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| 摘 要： | GaN nanorods have successfully been synthesized on Si(111) substrates via ammoniating ZnO/Ga2O3 films at 950℃. Ga2O3 thin films and ZnO middle layers were deposited in turn on Si(111) substrates by r.f. magnetron sputtering system. ZnO volatilized at 950℃ in the ammonia ambience and Ga2O3 reacted to NH3 to fabricate GaN nanorods in the later ammoniating process. The volatilization of ZnO layers played an important role in the fabrication. The structure and composition of the GaN nanorods were studied by X-ray diffraction (XRD) and Fourier transform infrared spectrophotometer (FTIR). The orphology ofGaN nanorods was investigated using scanning electron microscopy (SEM) and transmission electronic microscope (TEM). The analyses of measured results revealed that GaN nanorods with hexagonal wurtzite stxucture were prepared by this method.
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| 关 键 词： | 合成 氧化锌／三氧化二镓薄膜 氮化镓 半导体材料 硅基 挥发作用 磁控管溅射法 |
Synthesis of GaN nanorods on Si substrates with assistance of the volatilization of ZnO middle layers |
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| ZHUANGHuizhao GAOHaiyong XUEChengshan WANGShuyun DONGZhihua HEJianting.Synthesis of GaN nanorods on Si substrates with assistance of the volatilization of ZnO middle layers[J].Rare Metals,2005,24(2):110-114. |
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| Authors: | Zhuang Huizhao Gao Haiyong Xue Chengshan WANG Shuyun DONG Zhihua HE Jianting |
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| Affiliation: | College of Physics and Electronics, Shandong Normal University, Jinan 250014, China |
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| Abstract: | GaN nanorods have successfully been synthesized on Si(111) substrates via ammoniating ZnO/Ga2O3 films at 950℃. Ga2O3 thin films and ZnO middle layers were deposited in turn on Si(111) substrates by r.f. magnetron sputtering system. ZnO volatilized at 950℃ in the ammonia ambience and Ga2O3 reacted to NH3 to fabricate GaN nanorods in the later ammoniating process. The volatilization of ZnO layers played an important role in the fabrication. The structure and composition of the GaN nanorods were studied by X-ray diffraction (XRD) and Fourier transform infrared spectrophotometer (FTIR). The morphology of GaN nanorods was investigated using scanning electron microscopy (SEM) and transmission electronic microscope (TEM). The analyses of measured results revealed that GaN nanorods with hexagonal wurtzite structure were prepared by this method. |
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| Keywords: | semiconductor materials GaN nanorods r f magnetron sputtering ZnO/Ga2O3 films |
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