Creep rupture of a silicon carbide reinforced aluminum composite |
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Authors: | T. G. Nieh |
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Affiliation: | (1) Lockheed Palo Alto Research Laboratory, Lockheed Missiles and Space Company, Inc., 94304 Palo Alto, CA |
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Abstract: | The microstructure, texture, and whisker orientations in 6061 Al-20 wt pct SiC whisker composites have been examined using transmission electron microscopy and X-ray diffraction. Tension creep tests of the composite material have also been conducted in the temperature range 505 to 644 K (450 to 700 F). The steady state creep rate of the composite depends strongly on the temperature and applied stress. The stress exponent for the steady state creep rate of the composite is approximately 20.5 and remains essentially constant within the range of test temperatures. The activation energy is calculated to be 390 kJ/mol, nearly three times as high as the activation energy for self-diffusion of aluminum. No threshold stress was observed. Fracture surface examination using scanning electron microscopy shows that the composite fails by coalescence of voids in the aluminum matrix which originate at the aluminum-SiC interface. It is demonstrated that SiC paniculate composites are less creep resistant than SiC whisker composites. |
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