| 碳化硅MPS:新一代功率开关二极管 |
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| 引用本文： | 苗永斌,张玉明,张义门. 碳化硅MPS:新一代功率开关二极管[J]. 微电子学, 2004, 34(2): 116-121 |
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| 作者姓名： | 苗永斌 张玉明 张义门 |
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| 作者单位： | 西安电子科技大学,微电子所,陕西,西安,710071 |
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| 摘 要： | 碳化硅MPS(Merged PiN Schottky diode)具有很好的开关特性，并具有PiN二极管高阻断电压、低漏电流和SBD小开启电压，大导通电流以及高开关速度的优点，是最有希望的新一代功率开关二极管。文章系统地介绍了碳化硅MPS的结构和性能。理论和实验分析表明，碳化硅材料的优异性能与MPS结构的优势相结合，是当今功率开关管发展的趋势。
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| 关 键 词： | 功率开关二极管 碳化硅 MPS PiN二极管 肖特基势垒二极管 |
| 文章编号： | 1004-3365(2004)02-0116-06 |
Merged PiN Schottky Diodes:A New Power Switching Diode |
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| MIAO Yong-bin,ZHANG Yu-ming,ZHANG Yi-men. Merged PiN Schottky Diodes:A New Power Switching Diode[J]. Microelectronics, 2004, 34(2): 116-121 |
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| Authors: | MIAO Yong-bin ZHANG Yu-ming ZHANG Yi-men |
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| Abstract: | SiC MPS (merged PiN Schottky diodes) is a new generation of power switching diodes, which have the advantages of both PiN diodes and SBD's, such as high blocking voltage, low leakage current, low turn-on voltage, high forward current and high switching speed. The structure and performance of SiC MPS diodes are described in detail. Both theoretical analysis and experiments demonstrate that SiC MPS is the trend of development of power switching diodes in the future. |
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| Keywords: | Merged PiN Schottky diode Silicon carbide Power switching diodes |
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