非对称应变纤锌矿AlxGa1-xN/GaN/AlyGa1-yN量子阱中浅杂质态的结合能

本文采用变分法数值计算应变纤锌矿AlxGa1−xN/GaN/AlyGa1−yN量子阱中类氢杂质的基态结合能. 计及由自发极化和压电极化引起的内建电场, 讨论阱宽、杂质位置以及左右垒中Al组分对结合能的影响. 结果表明, 尤其在非对称量子阱即势垒宽度或（和）高度不一样的情形下, 杂质位置和垒高对结合能随阱宽变化关系的影响比垒宽更为明显. 对称或非对称结构中, 结合能随杂质位置的变化形如电子基态波函数的空间分布. 此外, 左垒中Al组分对结合能的影响较右垒更甚.

Binding energies of shallow impurities in asymmetric strained wurtzite AlxGa1-xN/GaN/AlyGa1-yN quantum wells

The ground state binding energies of hydrogenic impurities in strained wurtzite Al_xGa_1-xN/GaN/Al_yGa_1-yN quantum wells are calculated numerically by a variational method. The dependence of the binding energy on well width, impurity location and Al concentrations of the left and right barriers is discussed, including the effect of the built-in electric field induced by spontaneous and piezoelectric polarizations. The results show that the change in binding energy with well width is more sensitive to the impurity position and barrier heights than the barrier widths, especially in asymmetric well structures where the barrier widths and/or barrier heights differ. The binding energy as a function of the impurity position in symmetric and asymmetric structures behaves like a map of the spatial distribution of the ground state wave function of the electron. It is also found that the influence on the binding energy from the Al concentration of the left barrier is more obvious than that of the right barrier.