| MOCVD AlxGa1-xN/GaN超晶格结构的X射线反射谱与原子力显微研究 |
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| 引用本文： | 王元樟,李金钗,李书平,陈航洋,刘达艺,康俊勇.MOCVD AlxGa1-xN/GaN超晶格结构的X射线反射谱与原子力显微研究[J].半导体学报,2011,32(4):043006-4. |
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| 作者姓名： | 王元樟 李金钗 李书平 陈航洋 刘达艺 康俊勇 |
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| 作者单位： | 厦门理工学院数理系 |
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| 摘 要： | 采用掠入射X射线反射谱技术与原子力显微技术对属有机化合物化学气相淀积生长的AlxGa1-xN/GaN超晶格结构的表面和界面进行了精确表征。结合高分辨率X射线衍射谱与反射谱数据分析获得外延层各层厚度与AlGaN层的Al摩尔组分。掠入射x射线反射谱的显著强度振荡与原子力显微镜所观察到的台阶流动形貌表明了平整的界面和表面的存在。研究发现，低Al组分（x=0.25）且阱宽小的样品界面与表面粗糙度最小，通过原子力显微技术得到的表面粗糙度均方根偏差为0.45nm。
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| 关 键 词： | 金属有机化合物化学气相淀积 界面 表面‘GaN基半导体 超晶格 高分辨率x射线衍射 x射线反射谱 原子力显微镜 |
| 收稿时间： | 9/14/2010 1:55:59 PM |
X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures |
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| Wang Yuanzhang,Li Jinchai,Li Shuping,Chen Hangyang,Liu Dayi and Kang Junyong.X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures[J].Chinese Journal of Semiconductors,2011,32(4):043006-4. |
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| Authors: | Wang Yuanzhang Li Jinchai Li Shuping Chen Hangyang Liu Dayi and Kang Junyong |
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| Affiliation: | Department of Mathematics and Physics, Xiamen University of Technology, Xiamen 361024, China; Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China;Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China;Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China;Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China;Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China;Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, China |
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| Abstract: | The grazing incidence X-ray reflectivity (GIXR) technique and atomic force microscopy (AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown AlxGa1-xN/GaN superlattice structures. The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AlGaN layer. The presence of a smooth interface is responsible for the observation of intensity oscillation in GIXR, which is well correlated to step flow observation in AFM images of the surface. The structure with a low Al mole fraction (x=0.25) and thin well width has a rather smooth surface for the Rrms of AFM data value is 0.45 nm. |
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| Keywords: | metalorganic chemical vapor deposition interfaces surfaces nitrides superlattices high resolution X-ray diffraction |
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