New organometallic precursors and processes for chemical vapor deposition in the technology of nanomaterials |
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Authors: | F. A. Kuznetsov T. P. Smirnova N. I. Fainer N. B. Morozova I. K. Igumenov |
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Affiliation: | 1.Nikolaev Institute of Inorganic Chemistry, Siberian Branch,Russian Academy of Sciences,Novosibirsk,Russia |
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Abstract: | Processes of chemical vapor deposition (CVD) of metal and dielectric (high-k and low-k) films with the help of unconventional initial reagents (volatile complex and organoelement compounds) were developed. Complex investigation of the chemical and phase composition and structure of (HfO2)1 ? x (Me 2O3) x double oxides (where Me = Al, Sc), and silicon carbonitrides and oxycarbonitrides was carried out. It was shown that the resulting materials enjoy a number of unique functional properties, which makes them promising for application in micro-, nano-, and optoelectronic devices. |
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