New organometallic precursors and processes for chemical vapor deposition in the technology of nanomaterials

Processes of chemical vapor deposition (CVD) of metal and dielectric (high-k and low-k) films with the help of unconventional initial reagents (volatile complex and organoelement compounds) were developed. Complex investigation of the chemical and phase composition and structure of (HfO₂)_{1 ? x} (Me ₂O₃) _x double oxides (where Me = Al, Sc), and silicon carbonitrides and oxycarbonitrides was carried out. It was shown that the resulting materials enjoy a number of unique functional properties, which makes them promising for application in micro-, nano-, and optoelectronic devices.