Current-voltage characteristics of GaN and AlGaN p-i-n diodes |
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| Authors: | N. I. Kuznetsov K. G. Irvine |
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| Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia;(2) Cree Research Inc., Durham, North Carolina 27713, USA |
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| Abstract: | The current-voltage characteristics of GaN and Al0.08Ga0.92N p-i-n diodes were investigated. The experimental p-i-n structures were grown by MOCVD on 6H-SiC with Si and Mg as dopants. The i region was formed by simultaneously doping with donor and acceptor impurities during growth. Analysis of the current-voltage characteristics showed that current flow in the p-i-n diodes is due to either drift of thermally excited holes or electron-hole recombination in the i region via impurity centers—just as predicted by the Ashley-Milnes theory. These impurity centers are attributed to Mg acceptor levels. Fiz. Tekh. Poluprovodn. 32, 369–372 (March 1998) |
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