Design, fabrication and characterization of dual-channel real space transfer transistor

In this paper, using a δ-doping dual-channel structure and GaAs substrate, a real space transfer transistor (RSTT) is designed and fabricated successfully. It has the standard Λ-shaped negative resistance I–V characteristics as well as a level and smooth valley region that the conventional RSTT has. The negative resistance parameters can be varied by changing gate voltage (V _GS). For example, the PVCR varies from 2.1 to 10.6 while V _GS changes from 0.6 V to 1.0 V. The transconductance for I _P (ΔI _P/ΔV _GS) is 0.3 mS. The parameters of V _P, V _V and threshold gate voltage (V _T) for negative resistance characteristics arising are all smaller than the value reported in the literature. Therefore, this device is suitable for low dissipation power application. __________ Translated from Journal of Semiconductors, 2008, 29(1): 136–139 译自: 半导体学报]