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Integrated GaAs f.e.t. mixer performance at X band |
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| Authors: | Pucel RA Masse D Bera R |
| Affiliation: | Raytheon Company, Research Division, Waltham, USA; |
| Abstract: | Experiments were performed at X band with GaAs f.e.t.s used as mixer elements. These studies show that an f.e.t. mixer may exhibit a conversion gain approaching that of the corresponding amplifier. Conversion gains as high as 6 dB were measured. Low noise and high signal-handling capabilities were also demonstrated. |
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