Relaxation of defects in amorphous barium titanate thin films |
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| Authors: | F El Kamel P Gonon B Yangui |
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| Affiliation: | aLaboratory for Electrostatics and Dielectric Materials (LEMD), CNRS-25, avenue des Martyrs Grenoble 38042, France;bLaboratory for Materials, Organization and Properties (LabMOP), Campus Universitaire-El Manar, 2092 Tunis, Tunisia |
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| Abstract: | Relaxation of electrical defects in amorphous barium titanate thin films was studied by the thermally stimulated current (TSC) technique. We were able to detect at least three relaxation peaks in the TSC spectra. One is associated with activation energy of 0.65 eV and is possibly related to electronic trap levels below the conduction band. Another one is associated with activation energy close to 1 eV corresponding to the migration of positively charged oxygen vacancies within the films. |
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| Keywords: | Electronic and ionic defects Thermally stimulated current Amorphous BaTiO3 |
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