Low energy ion bombardment effects in gold/aluminum nitride/silicon junctions

Aluminum nitride was grown on n-type silicon substrates utilizing chemical vapor deposition. Low energy (5 keV) ion bombardment of methane, argon, and nitrogen was investigated as a method for surface modification prior to metal deposition. Gold contacts were deposited on ion bombarded and as-grown material and a back ohmic contact was formed to the silicon. Current-voltage measurements indicate that bombarded regions exhibit rectifying behavior. Interpretation of these results is presented with comparison of measurements on areas with and without implantation. Samples were also characterized with Raman scattering, x-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), and photoelectric measurements.