| 功率MOSFET并联应用 |
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| 引用本文： | 葛小荣.功率MOSFET并联应用[J].电子技术应用,2010,36(5). |
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| 作者姓名： | 葛小荣 |
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| 作者单位： | 万代半导体元件(上海)有限公司,上海,201203 |
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| 摘 要： | 从线路布线和参数配置等方面分析了导致MOSFET并联时电压和电流不均衡的原因,并联MOSFET易产生振荡的原因作了详细的分析,并辅以仿真说明振荡产生的原因。
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| 关 键 词： | 功率MOSFET 并联 振荡 |
Power MOSFET paralleling application |
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| GE Xiao Rong.Power MOSFET paralleling application[J].Application of Electronic Technique,2010,36(5). |
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| Authors: | GE Xiao Rong |
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| Abstract: | Analyzed the root cause of voltage and current unbalance when paralleling MOSFET from PCB layout and driver parameters aspect. At the same time, introduced the oscillation when paralleling MOSFET in detail with circuit simulation. |
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| Keywords: | power MOSFET paralleling oscillation |
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