Monolithic integration of Pb(Zr,Ti)O3 thin film based resonators using a complete dry microfabrication process |
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Authors: | Yonggang Jiang Kensuke Kanda Yuki Iga Takayuki Fujita Kohei Higuchi Kazusuke Maenaka |
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Affiliation: | 1. School of Mechanical Engineering and Automation, Beihang University, Xueyuan Road No. 37, Haidian District, Beijing, 100191, China 2. Maenaka Human-Sensing Fusion Project, ERATO, Japan Science and Technology Agency, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan 3. Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2280, Japan
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Abstract: | Monolithic fabrication of lead zirconate titanate Pb(Zr,Ti)O3 or PZT] based thin film resonant devices such as microcantilevers, Lamb wave and bulk acoustic wave resonators are demonstrated. High-performance PZT thin films with a thickness of 2.6 μm are prepared on a silicon on insulator wafer by a sputtering deposition process. A highly selective reactive ion etching process is employed for micro-patterning of PZT, platinum electrodes, and SiO2 insulation layer. Self-actuation of the PZT microcantilevers is demonstrated and the frequency response is characterized using a laser Doppler vibrometer. The frequency response of the Lamb wave resonator is evaluated by measuring its transmission characteristic using a network analyzer. For a Lamb wave resonator with a length of 240 μm and an interdigital period of 80 μm, the 1st order and 2nd resonance frequencies are 15.3 and 41.8 MHz, respectively. |
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