Modal analysis of IncGaAsP-InP,GaAs/AlGaAs-GaAs,and InGaAsP/AlGaAs-GaAs MIS heterostructure lasers |
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Authors: | K Kazi F C Jain |
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Affiliation: | 1. Electrical Engineering and Computer Science Department, and Institute of Materials Science, University of Connecticut, 06268, Storrs, CT
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Abstract: | The transverse modal behavior of Metal-Insulator (Oxide)-Semiconductor (MIS) heterostructure injection lasers is analyzed. MIS structures have been proposed by Jain and Marciniec as an alternate approach to p-n heterojunctions to obtain minority carrier injection and subsequent lasing action. In the modal analysis the MIS structure is treated as an asymmetrical three-layer slab waveguide with appropriate boundary conditions. Numerical computations of electric field strength, intensity and confinement factor P are presented for various GaAs and InP based MIS structures. A comparison of the output characteristics of a GaAs MIS laser with a conventional GaAs p-n double heterostructure laser is also reported. |
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