|
|||||
|
|
A 513‐ppi FFS‐mode LCD using technique for changing part of active layer of oxide semiconductor to transparent electrode |
|
| Authors: | Akio Yamashita Kouhei Toyotaka Masashi Oota Daisuke Kubota Hiroyuki Miyake Yoshiharu Hirakata Shunpei Yamazaki Masahiro Katayama Kenichi Okazaki Junichi Koezuka Hiroshi Matsukizono Yohsuke Kanzaki Seiji Kaneko Naoki Ueda Akihiro Oda Shigeyasu Mori Takuya Matsuo |
| Affiliation: | 1. Semiconductor Energy Laboratory Co., Ltd., , Atsugi‐shi, Kanagawa, 243‐0036 Japan;2. Advanced Film Device Inc., , Tochigi‐shi, Tochigi, 328‐0114 Japan;3. Sharp Corporation, , Tenri‐shi, Nara, 632‐8567 Japan |
| Abstract: | We have established a technique for changing part of an active layer of an oxide semiconductor (OS) to a transparent electrode in order to achieve an aperture ratio of 50% or higher and a bezel width of 1 mm in an fringe field switching (FFS) mode LCD panel with a high resolution of 513 ppi. Furthermore, we have prototyped an LCD panel by examining a driving mode that enables low‐frequency driving. |
| Keywords: | liquid crystal FFS‐mode six‐mask process CAAC‐OS OC 513 ppi high aperture ratio step structure electrode structure photoalignment narrow bezel channel‐etched FET demultiplexer low‐power frequency |