1. Semiconductor Energy Laboratory Co., Ltd., , Atsugi‐shi, Kanagawa, 243‐0036 Japan;2. Advanced Film Device Inc., , Tochigi‐shi, Tochigi, 328‐0114 Japan;3. Sharp Corporation, , Tenri‐shi, Nara, 632‐8567 Japan
Abstract:
We have established a technique for changing part of an active layer of an oxide semiconductor (OS) to a transparent electrode in order to achieve an aperture ratio of 50% or higher and a bezel width of 1 mm in an fringe field switching (FFS) mode LCD panel with a high resolution of 513 ppi. Furthermore, we have prototyped an LCD panel by examining a driving mode that enables low‐frequency driving.