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Growth and electrical properties of high-Curie point rhombohedral Mn-Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films
Authors:Zihao Li  Yuchun Wang  Yanxue Tang  Xiangyong Zhao  Tao Wang  Zhihua Duan  Feifei Wang  Xiaobing Li  Chung Ming Leung  Bijun Fang
Affiliation:1. Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University, Shanghai, China;2. School of Medical Instrument and Food Engineering, University of Shanghai for Science and Technology, Shanghai, China;3. School of Mechanical Engineering and Automation, Harbin Institute of Technology (Shenzhen), Shenzhen, China;4. School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou, China
Abstract:High-quality ternary relaxor ferroelectric (100)-oriented Mn-doped 0.36Pb(In1/2Nb1/2)O3-0.36Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 (Mn-PIMNT) thin films were grown on SrRuO3-buffered SrTiO3 single-crystal substrate in a wide deposition temperature range of 550-620°C using the pulsed laser deposition method. The phase structure, ferroelectric, dielectric, piezoelectric properties, and nanoscale domain evolution were studied. Under the deposition temperature of 620°C, the ferroelectric hysteresis loops and current-voltage curves showed that the film owned significantly enhanced remnant ferroelectric polarization of 34.5 μC/cm2 and low leakage current density of 2.7 × 10−10 A/cm2. Moreover fingerprint-type nanosized domain patterns with polydomain structures and well-defined macroscopic piezoelectric properties with a high normalized strain constant urn:x-wiley:00027820:media:jace17456:jace17456-math-0001 of 40 pm/V was obtained. Under in situ DC electric field, the domain evolution was investigated and 180° domain reversal was observed through piezoelectric force microscope. These global electrical properties make the current Mn-PIMNT thin films very promising in piezoelectric MEMS applications.
Keywords:high Curie point  piezoelectric  pulsed laser deposition  relaxor ferroelectric  thin films
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