Counter doping into uniformly and heavily doped channel region ofsub-0.1 μm SOI MOSFETs |
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Authors: | Suzuki K. Satoh A. Sugii T. |
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Affiliation: | Fujitsu Labs. Ltd., Atsugi; |
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Abstract: | We proposed counter doping into a heavily and uniformly doped channel region of SOI MOSFETs. This enabled us to suppress the short channel effects with proper threshold voltage Vth and to eliminate parasitic edge or back gate transistors. We derived a model for Vth as a function of the projected range, Rp and dose, ΦD, of the counter doping, and showed that Vth is invariable even when the as-implanted counter doping profile redistributes. Using this technology, we demonstrated a Vth roll-off free 0.075 μm-LGeff nMOSFET with low off-state current |
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