Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping |
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Authors: | Sangmoo Choi Canek Fuentes-HernandezMinseong Yun Amir DindarTalha M Khan Cheng-Yin WangBernard Kippelen |
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Affiliation: | Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States |
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Abstract: | We report on a reverse stamping method to produce via-holes in circuits comprising acene-based top-gate organic field-effect transistors (OFETs) having a CYTOP/Al2O3 (by atomic layer deposition) bilayer gate dielectric. This method relies on the weak adhesive force that exists between a small molecule acene film and a polymer to enable easy delamination of the bilayer gate dielectric by using a PDMS stamp. We demonstrate the effectiveness of this method by fabricating simple circuits using top-gate triisopropylsilylethynyl pentacene (TIPS-pentacene)/poly (triarylamine) (PTAA) OFETs. |
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Keywords: | Organic transistors Bilayer Interconnection Via-hole Circuits |
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