| 纳米ZnO薄膜制备及液态源掺杂 |
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| 引用本文： | 李健,宋淑芳,季秉厚. 纳米ZnO薄膜制备及液态源掺杂[J]. 真空科学与技术学报, 2002, 22(2): 149-152 |
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| 作者姓名： | 李健 宋淑芳 季秉厚 |
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| 作者单位： | 内蒙古大学理工学院,呼和浩特,010021 |
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| 摘 要： | 用真空蒸发法在玻璃和单晶硅片 (10 0 )上制备Zn薄膜 ,然后对Zn薄膜进行氧化、热处理获得纳米ZnO薄膜。对在硅片上制备的Zn薄膜一次性进行高温掺杂、氧化获得纳米ZnO∶P和ZnO∶B薄膜。研究不同氧化、掺杂温度和时间对薄膜结构、电学性能的影响。结果表明 :氧化温度和时间对ZnO薄膜结构影响较大 ,液态源掺P可明显改善纳米ZnO薄膜的导电性能、结构特性和化学组分
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| 关 键 词： | 真空蒸发 纳米ZnO薄膜 液态源掺杂 氧化 |
| 文章编号： | 0253-9748(2002)02-0149-04 |
| 修稿时间： | 2001-07-12 |
Growth of Nanometer ZnO Films and Liquid Source Doping |
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| Li Jian,Song Shufang,Ji Binghou. Growth of Nanometer ZnO Films and Liquid Source Doping[J]. JOurnal of Vacuum Science and Technology, 2002, 22(2): 149-152 |
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| Authors: | Li Jian Song Shufang Ji Binghou |
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| Abstract: | ZnO films,a few nanometers in thickness,were grown on Si(100) substrate by vacuum deposition of Zn,followed by in situ oxidation,doping of impurities and annealing.Influence of oxidation and annealing temperatures and time on the microstructures and the electric properties of the films was studied.The results show that oxidation temperature and time significantly affect the electric characteristics of the films.We found that liquid phosphor doping source considerably improves the conductivity,stoichiometry and microstructures of P doped ZnO films. |
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| Keywords: | Vacuum evaporation Nanometer ZnO film Liquid source doping Oxidation |
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