Effects of surface pretreatment of polysilicon electrode prior toSi3N4 deposition on the electrical characteristicsof Si3N4 dielectric films |
| |
| Authors: | Yoon GW Joshi AB Kwong DL Mathews VK Thakur RPS Fazan PC |
| |
| Affiliation: | Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX; |
| |
| Abstract: | Effects of various surface pretreatments of polysilicon electrode prior to Si3N4 deposition on leakage current, time-dependent dielectric breakdown (TDDB) and charge trapping characteristics of thin Si3N4 films deposited on rugged and smooth poly-Si are investigated. Surface pretreatments consist of different combinations of HF clean, rapid thermal H2 -Ar clean, and rapid thermal NH3-nitridation (RTN) and are intended to modify the surface of bottom poly-Si electrode. Results show that RTN treatments lead to lower leakage current, reduced charge trapping, and superior TDDB characteristics as compared to rapid thermal H2-Ar clean |
| |
| Keywords: | |
|
|
