Comparison of time-to-failure of GeSi and Si bipolar transistors |
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Authors: | Neugroschel A. Chih-Tang Sah Ford J.M. Steele J. Tang R. Stein C. |
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Affiliation: | Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL; |
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Abstract: | The effects of Ge in the epitaxial-base on the reliability of Si/GexSi1-x/Si heterojunction bipolar transistors were investigated. The ten-year time-to-failure under emitter-base junction reverse-bias stress was measured at the designed operation voltage by the current-acceleration method and compared to that of Si bipolar junction transistors with no Ge (x=0). The investigation shows that the Ge incorporated by the reduced pressure chemical vapor deposition epitaxial technology to give the ramp-type Ge profile has no adverse effects on the transistor reliability |
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