MOVPE grown InAlAs/InGaAs/InP MODFETs with very high f/sub T/ |
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| Authors: | Nummila K Tong M Ketterson A Adesida I Caneau C Bhat R |
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| Affiliation: | Illinois Univ., Urbana, IL, USA; |
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| Abstract: | High-performance 0.15 mu m gate length modulation-doped field-effect transistors (MODFETs) have been fabricated on a lattice-matched InAlAs/InGaAs heterostructure grown by organic vapour phase epitaxy (MOVPE). Excellent 'kink-free' DC characteristics with extrinsic transconductance g/sub m/ of 1080 mS/mm at a drain current of 508 mA/mm have been achieved. A unity current-gain cutoff frequency f/sub T/ of 187 GHz at room temperature has been measured, which is the highest value reported for MOVPE-grown lattice-matched InAlAs/InGaAs MODFETs.<> |
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