大功率半导体激光器贴片层空洞热效应影响

随着输出功率、转换效率、可靠性和制造工艺的提高以及成本的降低,大功率半导体激光器越来越广泛地应用于许多新的领域。大部分商业化销售的半导体激光器阵列/巴条是用铟作为焊料封装的。然而,在半导体激光器封装过程中不可避免地会在贴片层形成一些小空洞,这些小空洞在铟的电迁移和电热迁移作用下逐渐变大,这将导致芯片贴片层形成大量的空洞,造成芯片局部温度迅速上升。针对808 nm连续波40 W传导制冷单巴条半导体激光器阵列,系统地分析了半导体激光器贴片层空洞对发光点温度的影响以及贴片层内不同位置不同尺寸的空洞对发光点温升的影响,得到了发光点温升与空洞尺寸间的关系曲线。提出了利用空洞与发光点温度的关系及空间光谱来估算贴片层的空洞分布的方法,并将估算结果与实验测得的贴片层扫描声学显微图像进行了对比。

Thermal Reaction of High Power Semiconductor Laser with Voids in Solder Layer

With the improvement of power,efficiency,reliability,manufacturability,and cost of high power semiconductor laser,many new applications are being enabled.Most of the semiconductor laser bars are packaged with the indium solder.However,some small voids are created during the packaging process,which will be gradually enlarged by the electromigration and electrothermal migration of the indium solder.Voids may cause local overheating near the facets of the laser.Therefore it is necessary to study the thermal be...