| GaN发光二极管的老化数学模型及寿命测试方法 |
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| 引用本文： | 余菲,金雷. GaN发光二极管的老化数学模型及寿命测试方法[J]. 中国激光, 2011, 0(8) |
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| 作者姓名： | 余菲 金雷 |
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| 作者单位： | 中国科学院深圳先进技术研究院生物光子中心; |
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| 摘 要： | GaN发光二极管因其寿命、效率和环保等优点得到了广泛的应用。寿命问题一直是限制GaN发光二极管应用的核心问题。为了研究GaN发光二极管的老化过程,计算了GaN发光二极管物理参数,分析了GaN发光二极管的深能级缺陷和非辐射复合中心增加的老化原理,并且针对该原理的老化过程进行物理原理的分析推导,进而建立了老化数学模型。同时,利用一组实际的GaN发光二极管大应力老化实验的数据进行计算,提出了利用该数学模型的GaN发光二极管寿命的测试方法和数学计算方法,并计算出实验GaN发光二极管的寿命数值。提出的GaN发光二极管老化数学模型对比传统的阿伦纽斯模型具有针对性强、物理意义明显和寿命预测准等优点,具有很好的实际应用价值。
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| 关 键 词： | 光学器件 GaN 白光LED 发光二极管 老化 寿命 |
Mathematical Model of Aging and the Life Test Method for GaN LED |
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| Yu Fei Jin Lei. Mathematical Model of Aging and the Life Test Method for GaN LED[J]. Chinese Journal of Lasers, 2011, 0(8) |
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| Authors: | Yu Fei Jin Lei |
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| Affiliation: | Yu Fei Jin Lei(Center for Biophotonics Engineering,Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen,Guangdong 518055,China) |
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| Abstract: | GaN LED has got an extensive application for its life,efficiency,environmental protection and other advantages.The life question has been the core question,which limits the application of the GaN LED.In order to research the GaN LED aging process,calculate GaN LED physical parameters,such as life time and so on,the aging principle of deep level GaN LED defects and the non-radiation recombination centers increasing are analyzed.And according to the principle,we analyze the physical theory of GaN LED aging pr... |
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| Keywords: | optical devices GaN white LED light-emitting diode aging life time |
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