| 808nm InGaAlAs垂直腔面发射激光器的结构设计 |
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| 引用本文： | 张艳,宁永强,张金胜,张立森,张建伟,王贞福,刘迪,秦莉,刘云,王立军.808nm InGaAlAs垂直腔面发射激光器的结构设计[J].中国激光,2011(9). |
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| 作者姓名： | 张艳 宁永强 张金胜 张立森 张建伟 王贞福 刘迪 秦莉 刘云 王立军 |
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| 作者单位： | 中国科学院长春光学精密机械与物理研究所激发态重点实验室;中国科学院研究生院; |
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| 基金项目： | 国家自然科学基金(60636020,60706007,10974012,60876036,90923037,11074247和61006054)资助课题 |
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| 摘 要： | 为实现垂直腔面发射半导体激光器(VCSEL)在808 nm波长的激射,对VCSEL芯片的整体结构进行了设计。基于应变量子阱的能带理论、固体模型理论、克龙尼克-潘纳模型和光学传输矩阵方法,计算了压应变InGaAlAs量子阱的带隙、带阶、量子化子能级以及分布布拉格反射镜(DBR)的反射谱,从而确定了量子阱的组分、厚度以及反射镜的对数。数值模拟的结果表明,阱宽为6 nm的In0.14Ga0.74Al0.12As/Al0.3Ga0.7As量子阱,在室温下激射波长在800 nm左右,其峰值材料增益在工作温度下达到4000 cm-1;渐变层为20 nm的Al0.9Ga0.1As/Al0.2Ga0.8As DBR,出光p面为23对时反射率为99.57%,全反射n面为39.5对时反射率为99.94%。设计的顶发射VCSEL结构通过光电集成专业软件(PICS3D)验证,得到室温下的光谱中心波长在800 nm处,证实了结构设计的正确性。
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| 关 键 词： | 激光器 垂直腔面发射激光器 量子阱 数值模拟 分布布拉格反射镜 808nm |
Structural Design of 808 nm InGaAlAs Vertical-Cavity Surface-Emitting Laser |
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| Zhang Yan, Ning Yongqiang Zhang Jinsheng, Zhang Lisen, Zhang Jianwei,Wang Zhenfu, Liu Di , Qin Li Liu Yun Wang LijunKey Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics , Physics,Chines Academy of Sciences,Changchun,Jilin ,ChinaGraduate University of Chinese Academy of Sciences,Beijing ,China.Structural Design of 808 nm InGaAlAs Vertical-Cavity Surface-Emitting Laser[J].Chinese Journal of Lasers,2011(9). |
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| Authors: | Zhang Yan Ning Yongqiang Zhang Jinsheng Zhang Lisen Zhang Jianwei Wang Zhenfu Liu Di Qin Li Liu Yun Wang LijunKey Laboratory of Excited State Processes Changchun Institute of Optics Fine Mechanics Physics Chines Academy of Sciences Changchun Jilin ChinaGraduate University of Chinese Academy of Sciences Beijing China |
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| Affiliation: | Zhang Yan1,2 Ning Yongqiang1 Zhang Jinsheng1,2 Zhang Lisen1,2 Zhang Jianwei1,2Wang Zhenfu1,2 Liu Di 1,2 Qin Li 1 Liu Yun1 Wang Lijun11Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Physics,Chines Academy of Sciences,Changchun,Jilin 130033,China2Graduate University of Chinese Academy of Sciences,Beijing 100049,China |
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| Abstract: | A vertical-cavity surface-emitting laser(VCSEL) was structurally designed for emitting at 808 nm.Based on a comprehensive model,the composition and width of the compressively strained In1-x-yGaxAlyAs quantum well(QW) was determined.Using transmission matrix method,the spectral reflectance of distributed Bragg reflector(DBR) was plotted,and the pairs of the DBR were ascertained.The numerical simulation showed that the lasing wavelength of the In0.14Ga0.74Al0.12As/Al0.3Ga0.7As QW with the width of 6 nm is nea... |
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| Keywords: | lasers vertical-cavity surface-emitting laser quantum well numerical simulation distributed Bragg reflestor 808 nm |
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