| 激光退火法低温制备多晶硅薄膜的研究 |
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| 引用本文： | 刘传珍,杨柏梁,李牧菊,吴渊,张玉,李轶华,邱法斌,黄锡珉.激光退火法低温制备多晶硅薄膜的研究[J].液晶与显示,2000,15(1):46-52. |
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| 作者姓名： | 刘传珍 杨柏梁 李牧菊 吴渊 张玉 李轶华 邱法斌 黄锡珉 |
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| 作者单位： | 中国科学院,长春光学精密机械与物理研究所;北方液晶工程研究开发中心,吉林长春,130021 |
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| 基金项目： | 中国科学院“九五”重大项目(KY95-A1-502)和吉林省科委“九五”科技攻关项目(970103-01)资助 |
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| 摘 要： | 利用激光退火的方式在低温下制备多晶硅薄膜，采用ＸＲＤ、ＳＥＭ等分析手段，进行了表征与分析，对晶体的阈值能量密度进行了计算，并对激光退火的机理进行了探讨。研究结果表明：α－Ｓｉ晶化的阈值能量密与薄膜的厚度无关，在晶化区内，晶粒尺寸的大小随着照射到薄膜表面的激光能量密量的增加而增加。
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| 关 键 词： | 激光退火 能量密度 多晶硅薄膜 |
| 文章编号： | 1007-2780(2000)Ol-0046-O7 |
| 修稿时间： | 1999-12-04 |
Study of p-Si Film Obtained at Low Temperatures by Excimer Laser Annealing |
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| LIU Chuan-zhen,YANG Ba-liang,LI Mu-ju,WU Yuan,ZHANG Yu,LI Yi-hua,QIU Fa-bin,HUANG Xi-min.Study of p-Si Film Obtained at Low Temperatures by Excimer Laser Annealing[J].Chinese Journal of Liquid Crystals and Displays,2000,15(1):46-52. |
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| Authors: | LIU Chuan-zhen YANG Ba-liang LI Mu-ju WU Yuan ZHANG Yu LI Yi-hua QIU Fa-bin HUANG Xi-min |
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| Abstract: | P-Si films have been obtained by excimer laser annealing at room temperature. The films are characterized and analyzed by XRD, SEM. The energy density of crystallization was calculated and the mechanism of annealing was discussed. The result shows that the energy density of threshold for crystallization have no relation with the thickness of the films, and the grain sizes become larger when the laser energy density is higher. |
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| Keywords: | p-Si film laser annealing energy density |
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