Quasi-one-dimensional distribution of macropores in anodically etched uniaxially stressed silicon plates |
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Authors: | V I Emel’yanov K I Eremin V V Starkov E Yu Gavrilin |
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Affiliation: | (1) International Laser Center, Moscow State University, Moscow, Russia;(2) Institute for Problems of Microelectronic Technologies, Russian Academy of Sciences, Chernogolovka, Moscow oblast, Russia |
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Abstract: | Gradual transition from quasi-hexagonal to quasi-one-dimensional order was experimentally observed in an arrangement of macropores etched on the surface of a Si(100) plate inhomogeneously strained by bending. The observed phenomenon is theoretically described within the framework of a defect-deformation mechanism of the formation of ordered ensembles of seeding pores in etched semiconductors and metals. |
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