Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

For the first time, the random telegraph signal (RTS) and its corresponding flicker noise$(1/f)$were investigated in gate-all-around p-type Si-FinFETs. For a device with gate width of$sim$100 nm (fin height) and length of$sim$200 nm, the typical RTS capture/emission time constants were$sim$0.1–1 ms. Very large RTS amplitudes ($Delta I_d/I_d$up to 25%) were observed, which is an effect attributable to the extreme device scaling and/or interface quality of FinFETs. The estimated scattering coefficients$(alpha sim hbox10^-12 - hbox10^-13)$are found to be higher than typical values obtained from MOSFETs. These findings demonstrate the relevance of RTS for FinFET operation.