超辐射发光二极管数值仿真模型

采用谱分割方法和分段模型对1.5 μm 波段的超辐射发光二极管(SLD)进行了仿真.为减小分段模型的分段数目和计算时间,对文献中常采用的计算每小段平均光功率(平均光子数密度)的3种主要方法进行了对比分析,结果表明:积分平均的方法具有显著的优势.与商用器件的测试结果相比,数值计算的输出光谱和电流-输出功率曲线基本相符.对高功率SLD的数值仿真表明:在有源区长度大于1mm后,输出功率的增长出现明显的饱和现象,纵向空间烧孔(LSHB)效应限制了增加有源区长度对输出功率增长的贡献.此外,对高功率SLD,使用忽略LSHB效应的单段模型计算输出功率可产生数倍的误差,因此,采用分段模型计入LSHB效应是必要的.

Numerical simulation model of superluminescent diodes

The spectrum slicing technique and the subsection model were used to simulate a 1.5μm superluminescent diode(SLD).In order to reduce the subsection number in the model and the consumed time,three different average optical power(average photon density)calculation methods, which were commonly used in reference, were compared.It is found that the integral average method has remarkable superiority for SLD performance simulation.The results obtained from the simulation are compared with a commercial device,and reasonable agreement has been achieved for the optical power spectrum and P-I relationship.For high power SLDs,numerical results demonstrate that the output power begins to saturate notably when the length of the active region is beyond 1 mm.The longitudinal spatial hole burning (LSHB)effect limits the output power increasing with the length of the active region.In addition,the negligence of the LSHB effect in the single section model results in an incorrect prediction of the output power that is several times larger than it is supposed to be for the high power SLDs;therefore,it becomes necessary to adopt the subsection model and take into account the LSHB effect.