| 半导体光刻技术及设备的发展趋势 |
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| 引用本文： | 姚达,刘欣,岳世忠.半导体光刻技术及设备的发展趋势[J].半导体技术,2008,33(3):193-196. |
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| 作者姓名： | 姚达 刘欣 岳世忠 |
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| 作者单位： | 中国电子科技集团公司,第四十七研究所,沈阳,110032;中国人民解放军91550部队,辽宁,大连,116000;北京大学,软件与微电子学研究院,北京,100871 |
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| 摘 要： | 随着芯片集成度的不断提高、器件尺寸的不断缩小，光刻技术和光刻设备发生着显著变化。通过对目前国内外光刻设备生产厂商对下一代光刻技术的开发及目前已经应用到先进生产线上的光刻技术及设备进行了对比研究，对光刻技术和光刻设备的发展趋势进行了介绍，并对我国今后半导体光刻技术及设备的发展提出了合理化建议。
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| 关 键 词： | 光刻 光刻机 分辨率 掩模 焦深 曝光 |
| 文章编号： | 1003-353X（2008）03-0193-04 |
| 收稿时间： | 2007-10-11 |
Trends of Lithography Technology & Equipments for Semiconductor Fabrication |
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| Yao Da,Liu Xin,Yue Shizhong.Trends of Lithography Technology & Equipments for Semiconductor Fabrication[J].Semiconductor Technology,2008,33(3):193-196. |
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| Authors: | Yao Da Liu Xin Yue Shizhong |
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| Affiliation: | Yao Da1,Liu Xin2,Yue Shizhong3(1.The 47th Research Institute,CETC,Shenyang 110032,China,2.Unit 91550,PLA,Dalian 116000,3.School of Software , Microelectronics,Peking University,Beijing 100871,China) |
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| Abstract: | Lithography technology and equipments are in a significant improvement with high chip integration and the device size scaling down. The development trends of lithography and equipments for semiconductor fabrication are discussed through the current requirements for next generation lithography technology of lithography equipment manufactgrers domestic and abroad, and by comparing the lithography technology and equipments applied to advanced production line, and reasonable proposal development trend is given. |
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| Keywords: | lithography mask aligner resolution mask depth of focus(DOF) exposure |
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