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Fabrication of robust Bi3.25La0.75Ti3O12 thin film resistant to hydrogen damage |
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| Authors: | Chang Jung Kim |
| Affiliation: | Microelectronics Lab., Materials and Device Sector, Samsung Advanced Institute of Technology P.O. Box 111, Suwon 440-600, South Korea |
| Abstract: | Ferroelectric bismuth lanthanum titanate (Bi3.25La0.75Ti3O12; BLT) thin films were deposited on Pt/TiO2/SiO2/Si substrate by chemical solution deposition method. The films were crystallized in the temperature range of 600–700 °C. The spontaneous polarization (Ps) and the switching polarization (2Pr) of BLT film annealed at 700 °C for 30 min were 22.6 μC/cm2 and 29.1 μC/cm2, respectively. Moreover, the BLT capacitor did not show any significant reduction of hysteresis for 90 min at 300 °C in the forming gas atmosphere. |
| Keywords: | Author Keywords: BLT Ferroelectric thin film Hydrogen damage and FeRAM |
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