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Passivation effects of deuterium exposure on boron-doped CVD homoepitaxial diamond |
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| Authors: | Masahiko Ogura Norikazu Mizuochi Satoshi Yamasaki Hideyo Okushi |
| Affiliation: | aDiamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan;bCore Research for Evolution Science and Technology of Japan Science and Technology Corporation (CREST, JST), Japan;cGraduate School of Library, Information and Media Studies, University of Tsukuba, 1-2 Kasuga, Tsukuba, Ibaraki 305-8550, Japan |
| Abstract: | The deuterium (hydrogen) passivation effect on acceptors in boron-doped CVD homoepitaxial diamond was studied by electrical (Hall-effect) and secondary ion mass spectroscopy (SIMS) measurements. Deuterium was incorporated into the samples using microwave (MW) deuterium plasma at 673 K for 2–24 h. We observed the progress of acceptor passivation with p-type conduction, which finally resulted in a highly resistive state. |
| Keywords: | Diamond Electrical properties characterization Homoepitaxial Doping |
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