| 钝化膜提高GaN基LED光提取效率研究 |
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| 引用本文： | 达小丽,沈光地,徐晨,朱彦旭. 钝化膜提高GaN基LED光提取效率研究[J]. 固体电子学研究与进展, 2007, 27(4): 558-561 |
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| 作者姓名： | 达小丽 沈光地 徐晨 朱彦旭 |
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| 作者单位： | 北京工业大学光电子技术实验室,北京,100022 |
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| 摘 要： | 模拟计算了光的入射角度与反射率的关系,当光的入射角度大于23°时,发生全反射,无论是否在器件表面生长增透膜,这时的光都无法从器件顶部出射表面提取出来。研究了使用等离子体增强化学气相沉积法(PECVD)在已经制备了n电极和p电极的GaN基LED上制备钝化膜,分析了SiON和SiN_x膜沉积对于器件的光输出功率的影响。通过实验证明,在器件上沉积SiON后,光输出功率增加。
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| 关 键 词： | 氮化镓基发光二极管 等离子体增强化学沉积 钝化膜 |
| 文章编号： | 1000-3819（2007）04-558-04 |
| 收稿时间： | 2007-01-08 |
| 修稿时间： | 2007-03-26 |
Study on Enhancement of Light Output Power for GaN-based LED by Coating Passivation Layers |
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| DA Xiaoli,SHEN Guangdi,XU Chen,ZHU Yanxu. Study on Enhancement of Light Output Power for GaN-based LED by Coating Passivation Layers[J]. Research & Progress of Solid State Electronics, 2007, 27(4): 558-561 |
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| Authors: | DA Xiaoli SHEN Guangdi XU Chen ZHU Yanxu |
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| Abstract: | In this paper,we simulate the relationship between the reflectivity and the light incident angle.When the incident angle is more than 23°,the light can not be extracted from LED top emitting surface.We fabricate SiON and SiN_x films respectively at low temperature (100℃) through Plasma Enhanced Chemical Vapor Deposition (PECVD) to serve as the passivation layer of GaN-LEDs,and then compare their light output power.The light output power of the LED improved greatly after depositing the SiON passivation layer. |
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| Keywords: | GaN-LED plasma enhanced chemical vapour deposition passivation layer |
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