三元合金In_(0.53)Ga_(0.47)As迁移率的研究

<正> 本文对在(100)InP衬底上生长的晶格匹配的三元合金In_(0.53)Ga_(0.47)As的电子迁移率进行了研究,从理论上分析了影响电子迁移率的主要散射机构:极化光学声子散射,电离杂质散射,合金散射。并得出了有关结论。 半导体材料在低场下,平均漂移速度的大小与电场强度成正比,v_d=uε,迁移率的大小与温度、载流子浓度、材料的类别等有关,微观上则与各种散射因素相关,本文讨论的是在一定的温度区间(77～300K)、一定的杂质浓度(n～10~(16)cm~(-3))下,三元合金In_(0.53)Ga_(0.47)As的电子迁移率与几种主要的散射机构之间的关系。

Study on the Mobility of Ternary Alloy In_0.53Ga_0.47As

In this paper, the electron mobility of a ternary alloy In0.53Ga0.47As was studied and the scattering mechanisms influencing , the electron mobility were analyzed theoretically: the polar optical phonoa scattering, the ionized impurity scattering and the alloy scattering. A comparision between theoretical and experimental values and a discussion of their difference were made. The limitation of Matthiessea rule used to analyze a ternary alloy is indicated, which underestimates the scattering influences on the carrier mobility; therefore, the theoretical value is always slightly larger than the experimental value. Finally the significant effect of the alloy scattering oa the ternary alloy was confirmed.