Electrical insulation and bending properties of SiOx barrier layers prepared on flexible stainless steel foils by different preparing methods |
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Authors: | Yu-qiong LiZhi-nong Yu Jian LengDong-pu Zhang She ChenGang Jin |
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Affiliation: | a National Microgravity Laboratory (NML), Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, PR Chinab School of Optoelectronics, Beijing Institute of Technology, Beijing 100081, PR China |
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Abstract: | Stainless steel foils on which flexible display devices and integrated solar modules are prepared need to be coated by barrier layers for electrical insulation. In this study, SiOx barrier layer was prepared on steel foils (SUS 304) by ion beam assisted deposition, Sol-gel deposition and plasma enhanced chemical vapor deposition, respectively. The electrical properties of the SiOx films, such as resistance, reactance, leakage current density, breakdown field strength and performance index were investigated, and the bending properties were evaluated by bending tests. The best electrical insulation and bending properties of barrier could be achieved with 4 μm thick SiOx layer prepared by plasma enhanced chemical vapor deposition. |
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Keywords: | Silicon oxide Dielectric barriers Electrical insulation Bending resistance Stainless steel foils |
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