10 A, 2.4 kV Power DiMOSFETs in 4H-SiC |
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| Authors: | Sei-Hyung Ryu Agarwal A Richmond J Palmour J Saks N Williams J |
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| Affiliation: | Cree Inc, Durham, NC; |
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| Abstract: | We report the characteristics of large area (3.3 × 3.3 mm 2) high-voltage 4H-SiC DiMOSFETs. The MOSFETs show a peak MOS channel mobility of 22 cm2/V·s and a threshold voltage of 8.5 V at room temperature. The DiMOSFETs exhibit an on-resistance of 4.2 mΩ·cm2 at room temperature and 85 mΩ·cm2 at 200°C. Stable avalanche characteristics at approximately 2.4 kV are observed. An on-current of 10 A is measured on a 0.103 cm2 device. High switching speed is also demonstrated. This suggests that the devices are capable of high-voltage, high-frequency, low-loss switching applications |
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