S 波段GaN HEMT 宽带逆F 类高效率功率放大器设计

提出一种宽频带GaN HEMT 逆F 类功率放大器设计方法,并完成S 波段高效率功率放大器的研制。首先对改进的GaN HEMT Angelov 大信号缩放模型进行分析,确定功放管栅宽模型参数;然后通过输出电容补偿、负载牵引技术获得最佳输入、输出阻抗,设计谐波控制网络实现对谐波阻抗的峰化;最后基于宽频带、高效率原则完成电路仿真版图优化。为验证该方法,基于国产GaN HEMT(栅宽1. 25mm)设计了一款中心频率2. 9GHz,带宽大于40% 的高效率逆F 类功放,测试结果表明频带内输出功率均大于3W、漏极效率达到60%。

Design of S-Band Wide-Band GaN HEMT High Efficiency Inverse Class-F Power Amplifier

A method for design wide band GaN HEMT inverse Class-F (class-F-1) power amplifier is presented in this paper. This amplifier design method starts with large signal modeling of GaN HEMT based on an improved scalable Angelov model. Then, the input and output impedance characterization of class-F-1 is analyzed by load pull simulation with the consideration of output capacitance compensation. Finally, best impedance for class-F-1 amplifier is selected for the final design at the consideration of wide band and high efficiency. A GaN HEMT with 1. 25mm gate periphery is used to demonstrate this method. The amplifier shows more than 60% drain efficiency with more than 40% relative band width at the center frequency of 2. 9GHz.