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压力对热丝化学气相沉积的CH4/H2/Ar气氛中的纳米金刚石薄膜生长的影响
引用本文:杨树敏,贺周同,朱德彰,巩金龙,周兴泰. 压力对热丝化学气相沉积的CH4/H2/Ar气氛中的纳米金刚石薄膜生长的影响[J]. 功能材料与器件学报, 2009, 15(4)
作者姓名:杨树敏  贺周同  朱德彰  巩金龙  周兴泰
作者单位:上海应用物理研究所,中国科学院,上海,201800;中国科学院研究生院,北京,100049;上海应用物理研究所,中国科学院,上海,201800
基金项目:Key Project of Chinese Academy of Sciences Knowledge Innovation Program(Grant No.KJCX3.SYW.N10);;the National Natural Science Foundation of China(Grant No.10375085)
摘    要:在热丝化学气相沉积体系中,系统研究了气压对CH4/H2/Ar气氛中纳米金刚石薄膜生长的影响.研究发现,体系气压对纳米金刚石的生长有很大的影响.在40torr的气压下,在CH4/H2/Ar气氛中的Ar气含量需高达90%才能保证纳米金刚石薄膜的生长,但降低气压至5torr时,50%的Ar气含量即可保证纳米金刚石薄膜的生长.压力对薄膜生长表面的气体浓度的影响是这个转变的主要原因.在同样的Ar含量下,在5torr下的C2活性基团的浓度高于40 torr的浓度,因而低的Ar含量会保证纳米金刚石薄膜的生长.

关 键 词:纳米金刚石薄膜  热丝化学气相沉积  压力  Ar浓度

Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH_4/H_2/Ar gas mixture
YANG Shu-min,HE Zhou-tong,ZHU De-zhang,GONG Jin-long,ZHOU Xing-tai. Effect of pressure on nanocrystalline diamond films deposition by hot filament CVD technique from CH_4/H_2/Ar gas mixture[J]. Journal of Functional Materials and Devices, 2009, 15(4)
Authors:YANG Shu-min  HE Zhou-tong  ZHU De-zhang  GONG Jin-long  ZHOU Xing-tai
Affiliation:1.Shanghai Institute of Applied Physics;Chinese Academy of Sciences;Shanghai 201800;China;2.Graduate School of the Chinese Academy of Sciences;Beijing 100049;China
Abstract:The effect of pressure on the deposition of nanocrystalline diamond(NCD) films in a hot filament chemical vapor deposition(HFCVD) system was investigated using CH4/H2/Ar gas mixture.The reactor pressure was found to have the strongest influence on nucleation of nanocrystalline diamond films.The range of Ar concentration in the CH4/H2/Ar mixture that permits the deposition of nanocrystalline diamond(NCD) film at 40 torr is 90%,while the Ar concentration needed for the transition into nanocrystalline diamond ...
Keywords:nanoerystalline diamond films  HFCVD  pressure  Ar concentration
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