| 空穴注入控制型LIGBT的研究 |
| |
| 引用本文： | 杨健,朱小安,方健,李肇基. 空穴注入控制型LIGBT的研究[J]. 电子学报, 2000, 28(5): 119-121 |
| |
| 作者姓名： | 杨健 朱小安 方健 李肇基 |
| |
| 作者单位： | 电子科技大学微电子所,成都 610054 |
| |
| 基金项目： | 国家“九五”军事预研项目资助课题，国防基金项目资助课题 |
| |
| 摘 要： | 本文提出空穴注入控制型横向绝缘栅双极晶体管(CI-LIGBT),可有效控制高压下阳极区空穴注入,提高器件的抗闩锁性能.数值模拟与实验表明,通过对阳极区结深、反偏p+n+结击穿电压和取样电阻的优化,可实现其导通压降与抗闩锁性能的折衷.
|
| 关 键 词： | 智能功率集成电路 横向绝缘栅双极晶体管 闩锁 |
| 收稿时间： | 1999-02-01 |
Study of Controlled Hole Injection LIGBT |
| |
| YANG Jian,ZHU Xiao-an,FANG Jian,LI Zhao-ji. Study of Controlled Hole Injection LIGBT[J]. Acta Electronica Sinica, 2000, 28(5): 119-121 |
| |
| Authors: | YANG Jian ZHU Xiao-an FANG Jian LI Zhao-ji |
| |
| Affiliation: | The Institute of Microelectronics,The University of Electronics Science and Technology of China,Chengdu 610054,China |
| |
| Abstract: | Controlled hole injection LIGBT (CI LIGBT) is proposed in the paper,which can effectively control the hole injection with high anode voltage,and its latch up free characteristics can be improved.Numerical simulation and experiment indicate that its trade off between on state voltage and latch up free characteristics can be realized by the optimization of the anode junction depth,the breakdown voltage of the p +n + junction and the sampling resistance. |
| |
| Keywords: | smart power integrated circuit(SPIC) LIGBT latch up |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《电子学报》浏览原始摘要信息 |
|
点击此处可从《电子学报》下载免费的PDF全文 |
|
